ELECTRONIC PROPERTIES OF ION-BOMBARDED EVAPORATED GERMANIUM AND SILICON

被引：20
作者：
APSLEY, N
DAVIS, EA
TROUP, AP
YOFFE, AD
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 24期
关键词：
D O I：
10.1088/0022-3719/11/24/027
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：4983 / 4996
页数：14
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