共 23 条
- [1] DEFECT ANALYSIS BY ION CHANNELING - MONTE-CARLO SIMULATIONS OF THE DECHANNELING AND BACKSCATTERING EFFECTS OF LOOP DISLOCATIONS IN A SILICON CRYSTAL INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 581 - 586
- [2] MONTE-CARLO SIMULATION OF THE BACKSCATTERING EFFECTS OF LOOP DISLOCATIONS IN A SILICON CRYSTAL PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (02): : 379 - 385
- [3] MONTE-CARLO SIMULATION OF THE DECHANNELING EFFECTS OF DISLOCATIONS IN A SILICON CRYSTAL NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 42 (03): : 317 - 324
- [4] CLOSE ENCOUNTER PROCESSES IN MONTE-CARLO SIMULATIONS OF ION CHANNELING NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 90 (1-4): : 142 - 149
- [5] MONTE-CARLO SIMULATIONS OF NEUTRON BACKSCATTERING FROM VIBRATING SILICON-CRYSTALS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 338 (01): : 38 - 43
- [6] Modern analysis of ion channeling data by Monte Carlo simulations NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 240 (1-2): : 277 - 282
- [8] Monte Carlo simulations of the effects of thin layers of dislocation loops on dechannelling and backscattering in a silicon crystal NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 160 (03): : 333 - 342
- [9] THEORY AND MONTE-CARLO SIMULATIONS OF ION CHANNELING FOR DETERMINING LATTICE SITES OF SUBSTITUTIONAL ATOMS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 52 (02): : 170 - 181
- [10] DEFECT DISTRIBUTION IN ION-IMPLANTED SILICON - A MONTE-CARLO SIMULATION PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01): : 149 - 154