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- [1] EFFECTS OF WHOLE INGOT ANNEALING ON 1.49 EV PL PROPERTIES IN LEC-GROWN SEMI-INSULATING GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (05): : L339 - L341
- [2] ON THE ORIGIN OF DEFECTS IN SEMI-INSULATING LEC-GROWN GAAS SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 499 - 504
- [3] LATTICE BENDING IN LEC-GROWN SEMI-INSULATING GAAS WAFERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1983, 22 (10): : 1567 - 1569
- [5] LATTICE BENDING IN LEC-GROWN SEMI-INSULATING GaAs WAFERS. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1983, 22 (10): : 1567 - 1569
- [6] CHARACTERIZATION OF LEC-GROWN SEMI-INSULATING GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 7 - 12
- [10] PHOTOLUMINESCENCE EXCITATION OF THE 0.77-EV EMISSION IN UNDOPED SEMI-INSULATING GAAS PHYSICAL REVIEW B, 1984, 29 (04): : 2283 - 2285