MODEL OF EPITAXIAL-GROWTH OF GAAS ON SI(100) - NUCLEATION AT SURFACE STEPS

被引：9

作者：

ALERHAND, OL

KAXIRAS, E

JOANNOPOULOS, JD

TURNER, GW

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：695 / 699

页数：5

共 21 条

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[2] [Anonymous], ELECTRONIC STRUCTURE
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