PREPARATIONS OF A-SI-H FROM HIGHER SILANES (SINH2N+2) WITH THE HIGH GROWTH-RATE

被引:34
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OGAWA, K
SHIMIZU, I
INOUE, E
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10.1143/JJAP.20.L639
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O59 [应用物理学];
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页码:L639 / L642
页数:4
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共 7 条
[1]   PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712
[2]   AMORPHOUS SILICON SOLAR-CELL [J].
CARLSON, DE ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673
[3]   GROWTH-MORPHOLOGY AND DEFECTS IN PLASMA-DEPOSITED A-SI-H FILMS [J].
KNIGHTS, JC .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :159-170
[4]   AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].
LECOMBER, PG ;
SPEAR, WE ;
GHAITH, A .
ELECTRONICS LETTERS, 1979, 15 (06) :179-181
[5]  
SCOTT BA, 1980, APPL PHYS LETT, V37, P727
[6]  
SCOTT BA, 1981 P AIP C TETR BO
[7]   A-SI THIN-FILM AS A PHOTO-RECEPTOR FOR ELECTROPHOTOGRAPHY [J].
SHIMIZU, I ;
KOMATSU, T ;
SAITO, K ;
INOUE, E .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :773-778