VOLTAGE DEPENDENCE OF MICROPLASMA DENSITY IN P-N JUNCTIONS IN SILICON

被引：24

作者：

GOETZBERGER, A

STEPHENS, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1961年 / 32卷 / 12期

关键词：

D O I：

10.1063/1.1728366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2646 / &

共 18 条

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