EFFECTS OF THE INJECTION CURRENT PROFILE SHAPE ON SIDELOBES IN LARGE-APERTURE SEMICONDUCTOR-LASER AMPLIFIERS

被引：13

作者：

WHITE, JK ^{[1
]}

MCINERNEY, JG ^{[1
]}

MOLONEY, JV ^{[1
]}

机构：

[1] NATL UNIV IRELAND UNIV COLL CORK,DEPT PHYS,CORK,IRELAND

来源：

OPTICS LETTERS | 1995年 / 20卷 / 06期

关键词：

D O I：

10.1364/OL.20.000593

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Sharply peaked near-field sidelobes are formed when the input optical field pattern interacts with the edges of the current stripe in a semiconductor laser amplifier. The strength of this interaction is shown theoretically to depend principally on the first and second derivatives of the transverse current profile, and hence one can suppress the sidelobes by smoothing the sharp edges in the current injection.

引用

页码：593 / 595

页数：3

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