MICROSCOPIC MECHANISMS OF ACCURATE LAYER-BY-LAYER GROWTH OF BETA-SIC

被引：32

作者：

HARA, S ^{[1
]}

MEGURO, T ^{[1
]}

AOYAGI, Y ^{[1
]}

KAWAI, M ^{[1
]}

MISAWA, S ^{[1
]}

SAKUMA, E ^{[1
]}

YOSHIDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

THIN SOLID FILMS | 1993年 / 225卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90162-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer epitaxy of cubic SiC was investigated to examine gas reactions on the surface at high temperature using Auger electron spectroscopy and low energy electron diffraction. Self-limiting growth at one and one-third atomic monolayers at 1050-degrees-C was observed for exposure of a carbon-terminated surface to Si2H6, and self-limiting growth at just one atomic monolayer was observed for exposure of a silicon-saturated surface to C2H2. It was also found that the extra partial silicon layer of the silicon-saturated surface desorbs during C2H2 exposure. By alternating exposure to Si2H6 and C2H2, accurate layer-by-layer growth is achieved. In this system, the spontaneous atomic layer desorption of silicon which occurs during C2H2 exposure is consistent with the nature of exact atomic layer epitaxy.

引用

页码：240 / 243

页数：4

共 11 条

[1] CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON FROM SILANE AT LOW-TEMPERATURES .1. VERY LOW-PRESSURE DEPOSITION [J].