EFFECT OF BARRIER THICKNESS ASYMMETRIES ON THE ELECTRICAL CHARACTERISTICS OF ALAS/GAAS DOUBLE BARRIER RESONANT TUNNELING DIODES

被引：7
作者：
TSAO, AJ
REDDY, VK
MILLER, DR
GULLAPALLI, KK
NEIKIRK, DP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期
关键词：
D O I：
10.1116/1.586410
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the impact of small barrier thickness asymmetry on the dc I-V characteristics of AlAs/GaAs double barrier resonant tunneling diodes. With a bottom AlAs barrier 6 ML thick and GaAs well 18 ML thick, the effects of varying the top AlAs barrier thickness from 5 to 8 ML produced significant changes in peak current density, peak voltage, and peak-to-valley current ratio (PVCR). PVCRs of 5.6 were obtained on a 7/18/6 monolayer structure, the highest reported to date for an AlAs/GaAs DBRTD structure.
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页码：1042 / 1044
页数：3
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