DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF STAEBLER-WRONSKI EFFECT IN A-SI-H

被引：2

作者：

MIYANISHI, A ^{[1
]}

NAKATA, J ^{[1
]}

IMAO, S ^{[1
]}

SHIRAFUJI, J ^{[1
]}

KUBO, U ^{[1
]}

INUISHI, Y ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2B期

关键词：

A-SI-H; OPTICAL DEGRADATION; STAEBLER-WRONSKI EFFECT; DLTS; WEAK BOND; HOLE TRAP;

D O I：

10.1143/JJAP.30.L243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both voltage- and photoinjected DLTS study of the Staebler-Wronski effect in a-Si:H using isothermal high-speed capacitance-time (C-t) measurements (10(-3) approximately 10 s) were done to elucidate the processes of defect creation and annealing. It was found that the densities of hole traps at E(v) + 0.6 eV and electron traps at E(c) -0.4 eV were decreased by light soaking, accompanied by a simultaneous increase of electron traps at E(c) -0.9 eV and hole traps at E(v) + 0.8 eV due to the dangling bonds. This fact suggests that the shallower traps may relate to the weak bonds, which convert to the metastable dangling bonds by light soaking.

引用

页码：L243 / L245

页数：3