PREPARATION OF CU9AL4 INTERMETALLIC COMPOUND FILMS AS A METALLIZATION MATERIAL FOR LSI TECHNOLOGY

被引：4
作者：
NOYA, A
SASAKI, K
机构：
[1] Department of Electronic Engineering, Kitami Institute of Technology, Kitami
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 4A期
关键词：
THIN FILM; INTERMETALLIC COMPOUND; CU9AL4; METALLIZATION MATERIAL;
D O I：
10.1143/JJAP.30.L624
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The intermetallic compound film of Cu9Al4 was prepared by cosputtering at substrate temperatures below 300-degrees-C. The prepared film is structurally quite stable up to about 700-degrees-C, showing little change in X-ray diffraction pattern. The film with well-textured polycrystalline grains has a low electrical resistivity of 13-mu-OMEGA-cm. It is revealed that the films obtained have sufficiently promising properties well applicable as metallization material for large-scale integrated circuits.
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页码：L624 / L627
页数：4
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