THERMODYNAMIC AND EXPERIMENTAL-STUDY OF HIGH-PURITY ALUMINUM NITRIDE FORMATION FROM ALUMINUM-CHLORIDE BY CHEMICAL VAPOR-DEPOSITION

被引:55
作者
NICKEL, KG
RIEDEL, R
PETZOW, G
机构
关键词
D O I
10.1111/j.1151-2916.1989.tb05982.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:1804 / 1810
页数:7
相关论文
共 15 条
[1]  
BOROM MP, 1972, CERAMIC B, V51, P852
[2]  
CHASE MW, 1985, J PHYS CHEM REF DATA, V14
[3]   EPITAXIAL GROWTH OF ALUMINUM NITRIDE [J].
CHU, TL ;
ING, DW ;
NOREIKA, AJ .
SOLID-STATE ELECTRONICS, 1967, 10 (10) :1023-&
[4]  
ERIKSSON G, 1975, CHEM SCRIPTA, V8, P100
[5]  
KATO A, 1982, MATER SCI RES, V17, P123
[6]   SYNTHESIS OF FINE AIN POWDER BY VAPOR-PHASE REACTION [J].
KIMURA, I ;
HOTTA, N ;
NUKUI, H ;
SAITO, N ;
YASUKAWA, S .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1988, 7 (01) :66-68
[7]  
KRANZMANN A, 1986, 6TH P INT M MOD CER, P975
[8]   PROPERTIES OF ALUMINUM NITRIDE DERIVED DROM ALCL3 NH3 [J].
LEWIS, DW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :978-&
[9]   GROWTH CHARACTERISTICS OF A1N FILMS PYROLYTICALLY DEPOSITED ON SI [J].
NOREIKA, AJ ;
ING, DW .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5578-&
[10]   HERSTELLUNG DER NITRIDE VON BOR, ALUMINIUM, GALLIUM UND INDIUM NACH DEM AUFWACHSVERFAHREN [J].
RENNER, T .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1959, 298 (1-2) :22-33