POSITRON-ANNIHILATION IN GAAS

被引：0
|
作者：
MISHEVA, M [1 ]
MISHEV, P [1 ]
PASAJOV, G [1 ]
TOUMBEV, G [1 ]
YAKIMOVA, R [1 ]
机构：
[1] ACAD SCI BULGARIA,INST NUCL RES & NUCL ENERGY,BU-1784 SOFIA,BULGARIA
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1988年 / 23卷 / 03期
关键词：
D O I：
10.1002/crat.2170230322
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：405 / 408
页数：4
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