Programming Technologies for Field Programmable Gate Arrays

被引:0
作者
Abbasi, Tanvir Ahmed [1 ]
Abbasi, Mohammad Usaid [1 ]
机构
[1] Jamia Millia Islamia, Fac Engn & Technol, Univ Polytech, Dept Elect & Commun, New Delhi, India
来源
JOURNAL OF ACTIVE AND PASSIVE ELECTRONIC DEVICES | 2010年 / 5卷 / 1-2期
关键词
Field Programmable Gate Arrays; Application-Specific Integrated Circuits; SRAM; Antifuse; Make-Link; Floating Gate; VLSI;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A comprehensive study of various programming techniques available for field programmable gate arrays is recorded. The idea is to provide a framework to select a FPGA for specific application on the basis of their programming method. The programming method has a due impact on FPGA performance so adapting an appropriate programming technology for a particular application set makes a clear idea to enable the design engineer to find a trade-off between power consumption, simplified fabrication process and the programmable switch area. The importance of these programmable switches comes from the fact that they form the interconnection wiring between various logic cells and also the input/output blocks. There are other parameters, like volatility and non-volatility, on chip reprogrammability, switch-resistance, parasitic capacitance, etc. that also have to be considered as they greatly affected the FPGA loading and programming time.
引用
收藏
页码:129 / 143
页数:15
相关论文
共 29 条
[21]  
Shacham-Diamand Y, 1987, P INT EL DEV M
[22]  
SMITH MJS, 2003, APPL SPECIFIC INTEGR
[23]  
Speers T., 1999, P MAPLD INT C
[24]  
Verma Himanshu, 1999, FIELD PROGRAMMABLE G
[25]  
Wang J. J., SINGLE EVENT EFFECTS
[26]   HIGH-PERFORMANCE METAL SILICIDE ANTIFUSE [J].
WANG, SJ ;
MISIUM, GR ;
CAMP, JC ;
CHEN, KL ;
TIGELAAR, HL .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (09) :471-472
[27]   METAL-TO-METAL ANTIFUSES WITH VERY THIN SILICON DIOXIDE FILMS [J].
ZHANG, G ;
HU, C ;
YU, P ;
CHIANG, S ;
HAMDY, E .
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (08) :310-312
[28]   CHARACTERISTIC VOLTAGE OF PROGRAMMED METAL-TO-METAL ANTIFUSES [J].
ZHANG, G ;
HU, C ;
YU, P ;
CHIANG, S ;
HAMDY, E .
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (05) :166-168
[29]  
Zhang G., 1994, P INT EL DEV M