POLY-SI TFT AND DRIVER INTEGRATION TECHNOLOGY

被引：2

作者：

OHSHIMA, H

MATSUEDA, Y

机构：

[1] Corporate R & D, SEIKO EPSON Corporation, Nagano

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 1994年 / 77卷 / 07期

关键词：

POLYSILICON THIN FILM TRANSISTOR (TFT); DRIVER INTEGRATION TECHNOLOGY; TFT ON GLASS SUBSTRATE;

D O I：

10.1002/ecjb.4420770706

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline silicon thin-film transistors (poly-Si TFTs) are currently used in active-matrix liquid-crystal displays (LCDs). Driver integration technology of poly-TFTs results in compact, high-resolution TFT-LCDs. Various kinds of TFT driver circuits are discussed, and their performances are evaluated in the present paper. The use of a quartz substrate for conventional, high-temperature processed poly-Si TFTs limits their application to small LCDs. Low-temperature processed poly-Si TFTs on glass substrates will result in larger-size LCDs at lower cost.

引用

页码：46 / 55

页数：10

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