INXGA1-XSB/GAAS QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引:0
作者
EKENSTEDT, MJ [1 ]
OLSSON, E [1 ]
TREIDERIS, G [1 ]
ANDERSSON, TG [1 ]
WANG, SM [1 ]
QU, H [1 ]
机构
[1] VILNIUS SEMICOND PHYS INST,2600 VILNIUS,LITHUANIA,USSR
关键词
D O I
10.1016/0749-6036(92)90278-D
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Molecular beam epitaxy was used to grow lattice mismatched InxGa1-xSb layers on GaAs substrates. Optical and structural properties were examined by photoluminescence (PL) and transmission electron microscopy (TEM). Growth of the strained layers was found to be in layer-by-layer mode up to a critical layer thickness (CLT) where three dimensional growth and eventually dislocation generation occured. TEM revealed dislocations and stacking faults in a 2 monolayer thich InO.25Ga0.75Sb layer while a 3 monolayer thick InSb layer was defect free. The PL experiments were in general accordance with the TEM data showing an increase of critical layer thickness with increasing In-mole fraction. A reduced PL-intensity for the GaSb quantum wells is discussed in terms of indirect bandgap transitions and a staggered band line up between GaAs and GaSb. © 1992.
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页码:341 / 345
页数:5
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