OBSERVATION OF THE FRACTIONAL QUANTUM HALL-EFFECT IN SI/SIGE HETEROSTRUCTURES

被引：76

作者：

NELSON, SF ^{[1
]}

ISMAIL, K ^{[1
]}

NOCERA, JJ ^{[1
]}

FANG, FF ^{[1
]}

MENDEZ, EE ^{[1
]}

CHU, JO ^{[1
]}

MEYERSON, BS ^{[1
]}

机构：

[1] UNIV CAIRO,FAC ENGN,DEPT ELECTR & COMMUN,GIZA,EGYPT

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.107670

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed the fractional quantum Hall effect in the magnetotransport properties of a two-dimensional electron gas in an n-type Si/SiGe heterostructure. The effect was observed for filling factors v=2/3 and v=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm2/V s.

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收藏

页码：64 / 66

页数：3

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