SI-SIO2 INTERFACE CHARACTERIZATION BY ESCA

The concentration profiles of oxide films on Si have been studied by using ESCA and ellipsometry. To avoid artifacts from ion milling or chemical thinning, our analyses have been performed on grown oxides up to 5 nm thick on Si. The accurate values of the escape depths obtained from ESCA and the ellipsometric measurements in this study were used to analyze the intensity data for Si2p and O1s photoelectrons. Furthermore, the chemical states of Si atoms have been analyzed. The oxide films were found to be composed mostly of stoichiometric SiO2 with a very thin (about 0.3 nm) layer of SiO at the SiSiO2 interface, although the composition of oxide films appeared to be Sirich in appearance for thicknesses less than about 3 nm. © 1979.