121 GHZ RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS HAVING NEW COLLECTOR BARRIER STRUCTURE

被引：12

作者：

MORI, T

ADACHIHARA, T

TAKATSU, M

OHNISHI, H

IMAMURA, K

MUTO, S

YOKOYAMA, N

机构：

[1] Fujitsu Ltd., Atsugi, 10-1 Morinosato-Wakamiya

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 17期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This Letter describes a study of the DC and microwave characteristics of resonant-tunnelling hot electron transistors (RHETs) fabricated using a new i-InAlGaAs/i-GaAs collector barrier structure. The current gain at a low collector-base voltages was improved, enabling the RHETs to operate at low collector-emitter voltages and to decrease the transit time. A cutoff frequency f(T) of 121 Ghz was achieved at a temperature below 77 K with an emitter current density of 6.7 x 10(4) A/cm2. This is the highest value yet reported for either hot electron transistors or the quantum-effect devices.

引用

页码：1523 / 1524

页数：2

共 5 条

[1]

IMAMURA K, 1989, ELECTRON LETT, V25, P34

[2]

MORI T, 1990, 48TH ANN DEV RES DEV

[3] MODELING ELECTRON-TRANSPORT IN INGAAS-BASED RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS [J].