PLASMA OXIDATION OF SILICON IN A MICROWAVE-DISCHARGE AND ITS SPECIFICITY

被引：10

作者：

MUSIL, J ^{[1
]}

ZACEK, F ^{[1
]}

BARDOS, L ^{[1
]}

LONCAR, G ^{[1
]}

DRAGILA, R ^{[1
]}

机构：

[1] CZECH TECH UNIV, FAC NUCL SCI & PHYS ENGN, CS-11519 PRAGUE, CZECHOSLOVAKIA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1979年 / 12卷 / 05期

关键词：

D O I：

10.1088/0022-3727/12/5/005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Analyses conditions of oxide formation on silicon in a microwave plasma. Experimentally it is shown that oxide films can be created only in a plasma where the floating potential is close to zero or positive with respect to the grounded support of the Si sample.

引用

页码：L61 / L63

页数：3

共 4 条

[1] METHOD OF FORMATION OF THIN OXIDE-FILMS ON SILICON IN A MICROWAVE MAGNETOACTIVE OXYGEN PLASMA [J].

BARDOS, L ;

LONCAR, G ;

STOLL, I ;

MUSIL, J ;

ZACEK, F .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (16) :L195-L197

[2] SILICON OXIDE FILMS GROWN IN A MICROWAVE DISCHARGE [J].

KRAITCHMAN, J .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4323-+

[3] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES [J].

LIGENZA, JR .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2703-+

[4] OXIDE FILMS GROWN ON GAAS IN AN OXYGEN PLASMA [J].

WEINREICH, OA .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2924-+

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