CHARACTERIZATION OF MOVPE-GROWN ALGAAS/GAAS RESONANT TUNNELING STRUCTURES

[1] Bate R. T., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V792, P26, DOI 10.1117/12.940817

[2] OBSERVATION OF RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL STATES CONFINED BY AIA X-POINT BARRIERS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 344 - 346

[3] FUNDAMENTAL OSCILLATIONS UP TO 200 GHZ IN RESONANT TUNNELING DIODES AND NEW ESTIMATES OF THEIR MAXIMUM OSCILLATION FREQUENCY FROM STATIONARY-STATE TUNNELING THEORY [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) : 1519 - 1529

[4] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[5] FABRICATION OF 200-GHZ FMAX RESONANT-TUNNELING DIODES FOR INTEGRATED-CIRCUIT AND MICROWAVE APPLICATIONS [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (03) : 104 - 106

[6] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1086 - 1088

[7] LIFETIME OF RESONANT STATE IN A RESONANT TUNNELING SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L871 - L873

[8] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 121 - 123

[9] INVESTIGATIONS OF DOUBLE BARRIER RESONANT TUNNELING DEVICES BASED ON (ALGA)AS/GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1161 - 1164

[10] HUTCHISON JL, 1987, I PHYS C SER, V87, P1

[1] Bate R. T., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V792, P26, DOI 10.1117/12.940817

[2] OBSERVATION OF RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL STATES CONFINED BY AIA X-POINT BARRIERS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 344 - 346

[3] FUNDAMENTAL OSCILLATIONS UP TO 200 GHZ IN RESONANT TUNNELING DIODES AND NEW ESTIMATES OF THEIR MAXIMUM OSCILLATION FREQUENCY FROM STATIONARY-STATE TUNNELING THEORY [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) : 1519 - 1529

[4] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[5] FABRICATION OF 200-GHZ FMAX RESONANT-TUNNELING DIODES FOR INTEGRATED-CIRCUIT AND MICROWAVE APPLICATIONS [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (03) : 104 - 106

[6] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1086 - 1088

[7] LIFETIME OF RESONANT STATE IN A RESONANT TUNNELING SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L871 - L873

[8] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 121 - 123

[9] INVESTIGATIONS OF DOUBLE BARRIER RESONANT TUNNELING DEVICES BASED ON (ALGA)AS/GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1161 - 1164

[10] HUTCHISON JL, 1987, I PHYS C SER, V87, P1