RHEED INTENSITY ROCKING CURVES FROM SI(111) SURFACE DURING MBE GROWTH

被引：25

作者：

NAKAHARA, H

ICHIMIYA, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90445-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：472 / 475

页数：4

共 16 条

[1] MONOLAYER AND BILAYER GROWTH ON GE(111) AND SI(111) [J].

AARTS, J ;

LARSEN, PK .

SURFACE SCIENCE, 1987, 188 (03) :391-401

[2] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF EPITAXIAL-GROWTH ON SEMICONDUCTOR SURFACES [J].

COHEN, PI ;

PUKITE, PR ;

VANHOVE, JM ;

LENT, CS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1251-1258

[3]

HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

[4] RHEED INTENSITY ANALYSIS OF SI(111)7X7 AND 3-SQUARE-ROOT X 3-SQUARE-ROOT-AG SURFACES .1. KINEMATIC DIFFRACTION APPROACH [J].

HORIO, Y ;

ICHIMIYA, A .

SURFACE SCIENCE, 1983, 133 (2-3) :393-400

[5] OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

ICHIKAWA, M ;

DOI, T .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1141-1143

[6]

ICHIKAWA M, 1988, IN PRESS P NATO ADV

[7] RHEED INTENSITY ANALYSIS OF SI(111)7 X 7-H SURFACE [J].

ICHIMIYA, A ;

MIZUNO, S .

SURFACE SCIENCE, 1987, 191 (1-2) :L765-L771

[8]

ICHIMIYA A, 1987, SURF SCI, V192, pL893, DOI 10.1016/S0039-6028(87)81122-6

[9] RHEED INTENSITIES FROM STEPPED SURFACES [J].

ICHIMIYA, A .

SURFACE SCIENCE, 1987, 187 (01) :194-200

[10] THE DETERMINATION OF MBE GROWTH MECHANISMS USING DYNAMIC RHEED TECHNIQUES [J].

JOYCE, BA ;

DOBSON, PJ ;

NEAVE, JH ;

ZHANG, J .

SURFACE SCIENCE, 1986, 174 (1-3) :1-9

← 1 2 →