DIFFUSION OF ION-IMPLANTED GOLD IN P-TYPE SILICON

被引：23

作者：

COFFA, S ^{[1
]}

CALCAGNO, L ^{[1
]}

CAMPISANO, SU ^{[1
]}

CALLERI, G ^{[1
]}

FERLA, G ^{[1
]}

机构：

[1] SGS MICROELETTR,CATANIA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6291 / 6295

页数：5

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