DOPANT PROFILES DETERMINED FROM ENHANCEMENT-MODE MOSFET DC MEASUREMENTS

被引：23
作者：
BUEHLER, MG
机构：
来源：
APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 12期
关键词：
D O I：
10.1063/1.89572
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：848 / 850
页数：3
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