GENERATION-RECOMBINATION CENTERS IN P-TYPE HG1-XCDXTE

被引：55

作者：

JONES, CE ^{[1
]}

NAIR, V ^{[1
]}

POLLA, DL ^{[1
]}

机构：

[1] HONEYWELL INC,ELECTR OPT OPERAT,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 03期

关键词：

D O I：

10.1063/1.92702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：248 / 250

页数：3

共 50 条

[11] MBE P-TYPE HG1-XCDXTE GROWN ON THE (110) ORIENTATION
ARIAS, JM
SHIN, SH
GERTNER, ER
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 362 - 366
[12] AUGER RECOMBINATION IN HG1-XCDXTE
PETERSEN, PE
JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) : 3465 - &
[13] EXPERIMENTAL-DETERMINATION OF MINORITY-CARRIER LIFETIME AND RECOMBINATION MECHANISMS IN P-TYPE HG1-XCDXTE
POLLA, DL
TOBIN, SP
REINE, MB
SOOD, AK
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5182 - 5194
[14] Electrical characteristics of electroless gold contacts on p-type Hg1-xCdxTe
Singh, Anand
Shukla, A. K.
Jain, Sumit
Yadav, Brijesh S.
Pal, R.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 26 : 294 - 300
[15] DETERMINATION OF ACCEPTOR DENSITIES IN P-TYPE HG1-XCDXTE BY THERMOELECTRIC MEASUREMENTS
BAARS, J
BRINK, D
ZIEGLER, J
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1709 - 1715
[16] MAGNETOTRANSPORT MEASUREMENTS OF P-TYPE HG1-XCDXTE BASED SUPERLATTICES AND HETEROJUNCTIONS
WOO, KC
RAFOL, S
FAURIE, JP
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3093 - 3095
[17] ELECTRON-MOBILITY IN P-TYPE EPITAXIALLY GROWN HG1-XCDXTE
GORDON, NT
BARTON, S
CAPPER, P
JONES, CL
METCALFE, N
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : S221 - S224
[18] p-type arsenic doping of Hg1-xCdxTe by molecular beam epitaxy
Zandian, M
Chen, AC
Edwall, DD
Pasko, JG
Arias, JM
APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2815 - 2817
[19] GENERATION-RECOMBINATION NOISE IN P-TYPE SILICON
BOSMAN, G
ZIJLSTRA, RJJ
SOLID-STATE ELECTRONICS, 1982, 25 (04) : 273 - 280
[20] GENERATION-RECOMBINATION NOISE IN P-TYPE INSB
KAZANTSEV, GA
ROZHDEST.VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (05): : 550 - +

← 1 2 3 4 5 →