VACANCY ENHANCED DIFFUSION IN SILICON - EFFECTS OF IRRADIATION AND OF CHEMICAL IMPURITIES

被引：33
作者：
BARUCH, P
SAINTESPRIT, R
CONSTANTINESCU, C
PFISTER, JC
机构：
来源：
DISCUSSIONS OF THE FARADAY SOCIETY | 1961年 / 31期
关键词：
D O I：
10.1039/df9613100076
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
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页码：76 / &
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