FULLY ION-IMPLANTED P+-N GERMANIUM AVALANCHE PHOTO-DIODES

被引：21

作者：

KAGAWA, S ^{[1
]}

KANEDA, T ^{[1
]}

MIKAWA, T ^{[1
]}

BANBA, Y ^{[1
]}

TOYAMA, Y ^{[1
]}

MIKAMI, O ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 06期

关键词：

D O I：

10.1063/1.92385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：429 / 431

页数：3

共 9 条

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[2]

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[3] AN N+-N-P GERMANIUM AVALANCHE PHOTO-DIODE [J].

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ANDO, H .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :572-574

[4] SHALLOW-JUNCTION P+-N GERMANIUM AVALANCHE PHOTO-DIODES (APDS) [J].

KANEDA, T ;

FUKUDA, H ;

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ANDO, H .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :866-868

[5]

LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434

[6] IMPROVED GERMANIUM AVALANCHE PHOTO-DIODES [J].

MIKAMI, O ;

ANDO, H ;

KANBE, H ;

MIKAWA, T ;

KANEDA, T ;

TOYAMA, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (09) :1002-1007

[7] CRYSTAL ORIENTATION DEPENDENCE OF IONIZATION RATES IN GERMANIUM [J].

MIKAWA, T ;

KAGAWA, S ;

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MIKAMI, O .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :387-389

[8]

MIKAWA T, 1980, FUJITSU SCI TECH J, V16, P95

[9] AVALANCHE BREAKDOWN IN GERMANIUM [J].

MILLER, SL .

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