DEEP CENTERS AND BLUE-GREEN ELECTROLUMINESCENCE OF 4H-SIC

The DLTS spectra and the electroluminescence spectra of p-n structures, fabricated from 4H-SiC by sublimation epitaxy and ion implantation of Al, have been studied. The results agree qualitatively with results found in a study of 6H-SiC p-n structures fabricated by similar methods. The electroluminescence characteristics of 4H-SiC structures have been calculated on the basis of recombination models proposed for 6H-SiC and the parameters observed in 4H-SiC deep centers. The results agree well with the experimental results.