RAMAN-SPECTRA OF IN1-XGAXP UNDER HIGH-PRESSURE

被引：2
作者：
NAKAHARA, J
KATO, T
MINOMURA, S
ISHIDA, T
机构：
[1] Dept. of Phys., Hokkaido Univ., Sapporo
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 06期
关键词：
D O I：
10.1088/0268-1242/6/6/015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The phonon modes in In1-xGa(x)P (InGaP) were investigated under high pressure by Raman scattering spectroscopy. In InGaP a pressure-induced structure was observed between LO and TO modes. The origin of this structure is discussed by means of dielectric analysis, pressure dependence and composition dependence. We conclude that a part of the high energy side of this additional structure is caused by a disorder-activated zone boundary optical phonon.
引用
收藏
页码：496 / 499
页数：4
相关论文
共 15 条
  • [1] H C, Panish MB, (1978)
  • [2] Saxena BP, Hyder SB, Gregory PE, Escher JS, J. Electrochem. Soc., 127, 3, (1980)
  • [3] Kato T, Matsumoto T, Ishida T, J. Cryst. Growth, 71, 3, (1985)
  • [4] Lucovsky G, Brodsky MH, Chem MF, Chicotka RJ, Ward AT, Phys. Rev., 4, 6, (1971)
  • [5] Andrews AM, Korb HW, Holonyak N, Duke CB, Kleinman GG, Phys. Rev., 5, 6, (1972)
  • [6] Beserman R, Hirliman C, Balkanski M, Chevallier J, Solid State Commun., 20, 5, (1976)
  • [7] B Kh, Vishnevskii VN, Demchuk MI, Toporov VV, Ubaidullaev Sh B, Hildish L, Jahne E, Sov. Phys. Solid State, 23, 1, (1981)
  • [8] Inoshita T, J. Appl. Phys., 56, 7, (1984)
  • [9] Kato T, Matsumoto T, Ishida T, Japan. J. Appl. Phys., 27, (1988)
  • [10] Suzuki T, Gomyo A, Hino I, Kobayashi K, Kawata S, Iijima S, Japan. J. Appl. Phys., 27, (1988)
12