IN-GA-SB TERNARY PHASE DIAGRAM

[1] IN-GA-P TERNARY PHASE DIAGRAM AND ITS APPLICATION TO LIQUID PHASE EPITAXIAL GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1834 - &

[2] FOSTER LM, 1971, J ELECTROCHEM SOC, V118, P1175, DOI 10.1149/1.2408276

[3] SOLIDUS BOUNDARY IN GAP-INP PSEUDOBINARY SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 534 - +

[4] GREENFIELD IG, 1955, T AM I MIN MET ENG, V203, P351

[5] GUGGENHEIM EA, 1952, MIXTURES

[6] SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 385 - 388

[7] ILEGEMS M, 1968, S GAAS LONDON, P3

[8] LICHTER BD, 1969, T METALL SOC AIME, V245, P99

[9] LIU TS, 1952, T AM SOC METAL, V44, P539

[10] MEASUREMENT OF ACTIVITIES IN GALLIUM-INDIUM LIQUID ALLOYS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1968, 72 (03) : 1047 - &

[1] IN-GA-P TERNARY PHASE DIAGRAM AND ITS APPLICATION TO LIQUID PHASE EPITAXIAL GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1834 - &

[2] FOSTER LM, 1971, J ELECTROCHEM SOC, V118, P1175, DOI 10.1149/1.2408276

[3] SOLIDUS BOUNDARY IN GAP-INP PSEUDOBINARY SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 534 - +

[4] GREENFIELD IG, 1955, T AM I MIN MET ENG, V203, P351

[5] GUGGENHEIM EA, 1952, MIXTURES

[6] SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 385 - 388

[7] ILEGEMS M, 1968, S GAAS LONDON, P3

[8] LICHTER BD, 1969, T METALL SOC AIME, V245, P99

[9] LIU TS, 1952, T AM SOC METAL, V44, P539

[10] MEASUREMENT OF ACTIVITIES IN GALLIUM-INDIUM LIQUID ALLOYS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1968, 72 (03) : 1047 - &