OPTICAL-PROPERTIES OF THIN GEXSE1-X AMORPHOUS FILMS

被引:10
作者
ELSHAIR, HT
FOUAD, SS
机构
[1] Faculty of Education, Ain-Shams-University, Heliopolis, Cairo
关键词
Films - Optical Properties - Semiconducting Films - Amorphous - Solids - Optical Properties;
D O I
10.1016/0042-207X(91)90017-D
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical constants of Ge(x)Se1-x amorphous thin films of different thicknesses (23-335 nm) and of different compositions (0.05 less-than-or-equal-to x less-than-or-equal-to 0.30) were determined in the wavelength range 400-2000 nm. It was found that both the refractive index n and the absorption index k are independent of the film thickness for a given solution, whilst there is a distinct dependence of n and k on the Ge content. The linearity of alpha-1/2 = f(hv) yields the existence of indirect optical transitions. The corresponding forbidden band gaps were determined. The variation of the energy gap with x for Ge(x)Se1-x amorphous thin films was found to obey the relation E(GeSe) = YE(Ge) + (1-Y)E(Se), where Y is the volume fraction of Ge.
引用
收藏
页码:463 / 467
页数:5
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