ELECTRONIC CHARACTERIZATION OF INDIUM TIN OXIDE-SILICON PHOTO-DIODES

被引：44
作者：
CHANG, NS
SITES, JR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 09期
关键词：
D O I：
10.1063/1.325513
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4833 / 4837
页数：5
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