ION MIGRATION IN OXIDES OF MIS-STRUCTURES (AL-AL203-SI)

被引：3
作者：
PISTOULET, B
ROUZEYRE, M
AUVERGNE, D
机构：
[1] Centre d'Etudes d'Electronique des Solides associé au C.N.R.S., Faculté des Sciences de Montpellier
来源：
SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 12期
关键词：
D O I：
10.1016/0038-1101(69)90018-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a phenomenological model allowing the study of ions drift in MIS sandwiches under bias. The density of ions in the oxide layer and their mobility, the density of ionised surface states at the oxide-semiconductor interface, and the work function difference φMS between metal and semiconductor can then be deduced from capacitance vs. voltage measurements performed in a suitable manner. © 1969.
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页码：969 / +
页数：1
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SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
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