HIGH-PRESSURE OXIDATION OF INP THROUGH AN SIO2 OVERLAYER

被引：1
|
作者：
GEIB, KM
CHANG, RR
LILE, DL
WILMSEN, CW
HRYCKOWIAN, G
ZETO, RJ
机构：
[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703
[2] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期
关键词：
D O I：
10.1116/1.584563
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1126 / 1129
页数：4
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