DIFFUSION BARRIER WITH REACTIVELY SPUTTERED TIN FOR THERMALLY STABLE CONTACT

被引:2
作者
MITSUHASHI, K
YAMAZAKI, O
OHTAKE, K
KOBA, M
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期
关键词
D O I
10.1143/JJAP.27.L2401
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L2401 / L2403
页数:3
相关论文
共 7 条
[1]   INVESTIGATION OF REACTIVELY SPUTTERED TIN FILMS FOR DIFFUSION-BARRIERS [J].
KANAMORI, S .
THIN SOLID FILMS, 1986, 136 (02) :195-214
[2]  
Mitsuhashi K., 1988, 1988 Symposium on VLSI Technology. Digest of Technical Papers, P71
[3]  
MITSUHASHI K, 1988, 20TH INT C SOL STAT, P569
[4]   HIGH ASPECT RATIO HOLE FILLING BY TUNGSTEN CHEMICAL VAPOR-DEPOSITION COMBINED WITH A SILICON SIDEWALL AND BARRIER METAL FOR MULTILEVEL INTERCONNECTION [J].
SUGURO, K ;
NAKASAKI, Y ;
SHIMA, S ;
YOSHII, T ;
MORIYA, T ;
TANGO, H .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1265-1273
[5]  
SUGURO K, 1986, 18TH C SOL STAT DEV, P503
[6]   THE USE OF TITANIUM-BASED CONTACT BARRIER LAYERS IN SILICON TECHNOLOGY [J].
TING, CY ;
WITTMER, M .
THIN SOLID FILMS, 1982, 96 (04) :327-345
[7]  
YAMAZAKI O, 1988, 5TH INT WORKSH FUT E, P159