ELECTRONIC-STRUCTURE DUE TO HYDROGEN AND VANADIUM AS SUBSTITUTIONAL IMPURITIES IN INP

被引：4
作者：
KHOWASH, PK [1 ]
ELLIS, DE [1 ]
机构：
[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.37.2973
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2973 / 2978
页数：6
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