SUBTHRESHOLD CURRENT IN GAAS-MESFETS

被引：16
|
作者：
CONGER, J [1 ]
PECZALSKI, A [1 ]
SHUR, MS [1 ]
机构：
[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 03期
关键词：
SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTOR DEVICES; FIELD EFFECT - Mathematical Models;
D O I：
10.1109/55.2064
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors present experimental data that show that the drain-to-source voltage dependence of the subthreshold current in GaAs MESFETs is determined by the variation of threshold voltage with drain-source voltage and not by Schottky-barrier lowering. This model, incorporating gate-to-drain and gate-to-source diode currents, is shown to be in good agreement with measured data. The model is incorporated into a GaAs circuit simulator and is suitable for GaAs IC design.
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页码：128 / 129
页数：2
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