SPOT COMPRESSION POINTS WITH EQUAL-GAIN CIRCLES

被引：0

作者：

MONROE, JW ^{[1
]}

KONING, JGD ^{[1
]}

KELLY, WM ^{[1
]}

TOKUDA, H ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,DIV MICROWAVE SEMICOND,PALO ALTO,CA 94304

来源：

MICROWAVES | 1977年 / 16卷 / 10期

关键词：

TRANSISTORS; BIPOLAR; -; Applications; FIELD EFFECT - Applications;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 1-dB compression point is the output power at which the amplifier gain decreases by 1 dB from its small signal value. A designer's goal is obviously to achieve a high 1-dB compression point. The approach suggested in the article allows a designer to select a load impedance that maximizes the power output of a GaAs FET or bipolar transistor at the 1-dB compression point. In fact, the design aid lets the designer predict the 1-dB compression point resulting from various amplifier circuit configurations, allowing maximum flexibility in meeting the amplifier's overall performance objectives.

引用

页码：60 / &

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