SPOT COMPRESSION POINTS WITH EQUAL-GAIN CIRCLES

被引：0
|
作者：
MONROE, JW [1 ]
KONING, JGD [1 ]
KELLY, WM [1 ]
TOKUDA, H [1 ]
机构：
[1] HEWLETT PACKARD CO,DIV MICROWAVE SEMICOND,PALO ALTO,CA 94304
来源：
MICROWAVES | 1977年 / 16卷 / 10期
关键词：
TRANSISTORS; BIPOLAR; -; Applications; FIELD EFFECT - Applications;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The 1-dB compression point is the output power at which the amplifier gain decreases by 1 dB from its small signal value. A designer's goal is obviously to achieve a high 1-dB compression point. The approach suggested in the article allows a designer to select a load impedance that maximizes the power output of a GaAs FET or bipolar transistor at the 1-dB compression point. In fact, the design aid lets the designer predict the 1-dB compression point resulting from various amplifier circuit configurations, allowing maximum flexibility in meeting the amplifier's overall performance objectives.
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页码：60 / &
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