ARSENIC-INDUCED INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS

被引：62
作者：
LEWIS, BF [1 ]
FERNANDEZ, R [1 ]
MADHUKAR, A [1 ]
GRUNTHANER, FJ [1 ]
机构：
[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期
关键词：
D O I：
10.1116/1.583432
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：560 / 563
页数：4
相关论文
共 9 条
[1]   GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY [J].
HWANG, JCM ;
TEMKIN, H ;
BRENNAN, TM ;
FRAHM, RE .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :66-68
[2]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS [J].
LEWIS, BF ;
GRUNTHANER, FJ ;
MADHUKAR, A ;
LEE, TC ;
FERNANDEZ, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1317-1322
[3]   RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100) [J].
LEWIS, BF ;
LEE, TC ;
GRUNTHANER, FJ ;
MADHUKAR, A ;
FERNANDEZ, R ;
MASERJIAN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :419-424
[4]   DYNAMIC RHEED OBSERVATIONS OF THE MBE GROWTH OF GAAS - SUBSTRATE-TEMPERATURE AND BEAM AZIMUTH EFFECTS [J].
NEAVE, JH ;
JOYCE, BA ;
DOBSON, PJ .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03) :179-184
[5]   DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].
NEAVE, JH ;
JOYCE, BA ;
DOBSON, PJ ;
NORTON, N .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8
[6]   ATOMIC CORRELATIONS OF STEPPED SURFACES AND INTERFACES [J].
PIMBLEY, JM ;
LU, TM .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) :182-187
[7]   DISORDER ON GAAS(001) SURFACES PREPARED BY MOLECULAR-BEAM EPITAXY [J].
VANHOVE, JM ;
COHEN, PI ;
LENT, CS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02) :546-550
[8]   DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE [J].
VANHOVE, JM ;
LENT, CS ;
PUKITE, PR ;
COHEN, PI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :741-746
[9]   CLEANING CHEMISTRY OF GAAS(100) AND INSB(100) SUBSTRATES FOR MOLECULAR-BEAM EPITAXY [J].
VASQUEZ, RP ;
LEWIS, BF ;
GRUNTHANER, FJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :791-794
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