共 16 条
[1]
A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES
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PHILOSOPHICAL MAGAZINE,
1966, 14 (128)
:301-&
[2]
METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY
[J].
BRITISH JOURNAL OF APPLIED PHYSICS,
1962, 13 (09)
:446-&
[5]
GROWTH OF EPITAXIAL LAYERS OF SILICON BY SUBLIMATION THROUGH THIN ALLOY ZONES
[J].
BRITISH JOURNAL OF APPLIED PHYSICS,
1966, 17 (01)
:81-&
[10]
SILICON WHISKER GROWTH AND EPITAXY BY VAPOUR-LIQUID-SOLID MECHANISM
[J].
BRITISH JOURNAL OF APPLIED PHYSICS,
1965, 16 (08)
:1089-&