INFLUENCE OF PREPARATORY SURFACE TREATMENT OF GALLIUM ARSENIDE SUBSTRATES ON PERFECTION OF AUTOEPITAXIAL LAYERS GROWING ON THEM

被引：0

作者：

MAGOMEDOV, KA

MAGOMEDO.NN

机构：

来源：

SOVIET PHYSICS CRYSTALLOGRAPHY, USSR | 1967年 / 12卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：286 / +

页数：1

共 9 条

[1] ETCHING OF GALLIUM ARSENIDE WITH NITRIC ACID [J].

KYSER, DF ;

MILLEA, MF .

[2]

MAGOMEDOV KA, 1965, GROWTH CRYSTALS, V6, P391

[3]

MAGOMEDOV KA, 1967, KRISTALLOGRAFIYA, V12, P343

[4]

MAGOMEDOV KA, SOVIET PHYSICSCRYSTA, V9, P756

[5]

MAGOMEDOV KA, 1964, KRISTALLOGRAFIYA, V9, P902

[6] THERMAL OXIDATION OF GAAS [J].

MINDEN, HT .

[7]

PETRUSEVICH RL, 1964, KRISTALLOGRAFIYA, V9, P722

[8]

PETRUSEVICH RL, 1964, SOVIET PHYSICSCRYSTA, V9, P606

[9] GROWTH OF GALLIUM ARSENIDE BY HORIZONTAL ZONE MELTING [J].

RICHARDS, JL .