INFLUENCE OF OXYGEN IMPLANTATION CONDITIONS ON THE PROPERTIES OF A HIGH-TEMPERATURE-ANNEALED SILICON-ON-INSULATOR MATERIAL

被引：9
|
作者：
GOLANSKI, A
PERIO, A
GROB, JJ
STUCK, R
MAILLET, S
CLAVELIER, E
机构：
[1] CTR RECH NUCL,GRP PHASE,F-67037 STRASBOURG,FRANCE
[2] THOMSON SEMICOND,F-38017 GRENOBLE,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 21期
关键词：
D O I：
10.1063/1.97342
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1423 / 1425
页数：3
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