INFLUENCE OF OXYGEN IMPLANTATION CONDITIONS ON THE PROPERTIES OF A HIGH-TEMPERATURE-ANNEALED SILICON-ON-INSULATOR MATERIAL

被引：9

作者：

GOLANSKI, A

PERIO, A

GROB, JJ

STUCK, R

MAILLET, S

CLAVELIER, E

机构：

[1] CTR RECH NUCL,GRP PHASE,F-67037 STRASBOURG,FRANCE

[2] THOMSON SEMICOND,F-38017 GRENOBLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 21期

关键词：

D O I：

10.1063/1.97342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1423 / 1425

页数：3

共 15 条

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[6] SOLUBILITY AND DIFFUSION-COEFFICIENT OF OXYGEN IN SILICON [J].

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NOZAKI, T .

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[7]

MAILLET S, 1985, ENERGY BEAM SOLID IN, P489

[8]

MAILLET S, UNPUB NUCL INSTRUM B

[9] KINETICS OF THERMAL DONOR GENERATION IN SILICON [J].

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[10]

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