ENHANCEMENT OF DEFECT-INDUCED RAMAN MODES AT THE FUNDAMENTAL ABSORPTION-EDGE OF ELECTRON-IRRADIATED GAAS

被引：11
作者：
BERG, RS
YU, PY
机构：
[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720
来源：
PHYSICAL REVIEW B | 1986年 / 33卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.33.7349
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7349 / 7352
页数：4
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