SINGLE-ELECTRON TUNNELING IN SINGLE JUNCTIONS AND MULTIJUNCTION SYSTEMS

被引：1
|
作者：
DRESSELHAUS, PD
JI, L
HAN, SY
LIN, K
LUKENS, J
LIKHAREV, KK
机构：
[1] Department of Physics, University at Stony Brook, Stony Brook
来源：
PHYSICA B | 1994年 / 194卷
关键词：
D O I：
10.1016/0921-4526(94)90997-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Experimental dc I-V curves of single ultra-small (approximately 50 x 50 nm2) Al/AlO(x)/Al tunnel junctions were used to model characteristics of single-electron transistors using similar junctions, within the framework of the ''orthodox'' theory of correlated tunneling. We have found that results from the simulations are very similar to experimental I-V curves of the transistors measured over a wide range of temperature.
引用
收藏
页码：1335 / 1336
页数：2
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