PHOTOLUMINESCENCE DARK SPOT DYNAMICS IN GAAS GROWN ON SI

被引：1

作者：

WADA, N

SAKAI, S

FUKUI, M

机构：

[1] Department of Electrical and Electronic Engineering, Tokushima University, Minami-Josanjima, Tokushima

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期

关键词：

DARK SPOT; PHOTOLUMINESCENCE IMAGE DISLOCATION; GAAS ON SI; UCGAS; THERMAL STRESS;

D O I：

10.1143/JJAP.33.864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It was found that DSs (dark spots) observed in room temperature PLI (photoluminescence images) of GaAs grown on Si substrates moved under certain conditions. The DS dynamics in planar GaAs on Si, UCGAS (undercut GaAs on Si), undercut structures on GaAs substrates and planar homoepitaxial GaAs are measured and compared. The number of moving DSs is larger and their speed is higher in the samples with higher stress and at higher excitation. The results are consistent with the dislocation dynamics in GaAs normally seen at elevated temperature.

引用

页码：864 / 868

页数：5

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