FURTHER EXAMINATION OF THE SI KLL AUGER LINE IN SILICON-NITRIDE THIN-FILMS

被引:138
作者
TAYLOR, JA
机构
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D O I
10.1016/0378-5963(81)90068-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:168 / 184
页数:17
相关论文
共 32 条
[1]  
Carlson T. A., 1972, Journal of Electron Spectroscopy and Related Phenomena, V1, P161, DOI 10.1016/0368-2048(72)80029-X
[2]   UTILITY OF BREMSSTRAHLUNG-INDUCED AUGER PEAKS [J].
CASTLE, JE ;
WEST, RH .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1979, 16 (03) :195-197
[3]  
CASTLE JE, 1979, J ELECTRON SPECTROSC, V16, P97, DOI 10.1016/0368-2048(79)85008-2
[4]   X-RAY PHOTOELECTRON-SPECTROSCOPY USING SI KALPHA RADIATION [J].
CASTLE, JE ;
HAZELL, LB ;
WHITEHEAD, RD .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 9 (03) :247-250
[5]   THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE ELECTRONIC-STRUCTURE OF OXYGEN ON SILICON [J].
CHEN, M ;
BATRA, IP ;
BRUNDLE, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1216-1220
[6]   NITRIDATION OF SILICON (111) - AUGER AND LEED RESULTS [J].
DELORD, JF ;
SCHROTT, AG ;
FAIN, SC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :517-520
[7]  
DISTEFANO TH, 1971, PHYS REV LETT, V27, P107
[8]   ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].
FLITSCH, R ;
RAIDER, SI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :305-308
[9]  
GEYULAI J, 1971, J APPL PHYS, V42, P451
[10]   CHEMICAL EFFECTS IN AUGER-ELECTRON SPECTROSCOPY [J].
HAAS, TW ;
GRANT, JT ;
DOOLEY, GJ .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1853-&