ANNEALING OF HEAVY-ION CASCADE DAMAGE IN SILICON

被引：20

作者：

THOMPSON, DA

GOLANSKI, A

HAUGEN, HK

HOWE, LM

DAVIES, JA

机构：

[1] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

[2] ATOM ENERGY CANADA LTD,CHALK RIVER NUCL LABS,CHALK RIVER K0J 1J0,ONTARIO,CANADA

来源：

RADIATION EFFECTS LETTERS | 1980年 / 50卷 / 3-6期

关键词：

D O I：

10.1080/01422448008218667

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Channeling measurements have been performed to investigate the annealing of the irradiation damage produced in monocrystalline silicon by low dose (10**1**2 minus 10**1**3 ions cm** minus **2) implants at 40 K with monatomic and diatomic ions of As, Sb, Te and Bi having incident energies of 15-30 keV. This paper presents experimental details and results.

引用

页码：125 / 131

页数：7

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