ANNEALING OF HEAVY-ION CASCADE DAMAGE IN SILICON

被引：20
作者：
THOMPSON, DA
GOLANSKI, A
HAUGEN, HK
HOWE, LM
DAVIES, JA
机构：
[1] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA
[2] ATOM ENERGY CANADA LTD,CHALK RIVER NUCL LABS,CHALK RIVER K0J 1J0,ONTARIO,CANADA
来源：
RADIATION EFFECTS LETTERS | 1980年 / 50卷 / 3-6期
关键词：
D O I：
10.1080/01422448008218667
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Channeling measurements have been performed to investigate the annealing of the irradiation damage produced in monocrystalline silicon by low dose (10**1**2 minus 10**1**3 ions cm** minus **2) implants at 40 K with monatomic and diatomic ions of As, Sb, Te and Bi having incident energies of 15-30 keV. This paper presents experimental details and results.
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页码：125 / 131
页数：7
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