ION CHANNELING STUDY OF P-IMPLANTATION DAMAGE IN CDTE

Phosphorus implantation was performed on single-crystal samples of [111] CdTe at incident energies of 50, 100 and 200 keV, with fluences up to 4 x 10(16) P/cm2. All implants were done at room temperature with current densities below 0.2-mu-A/cm2. In order to investigate the damage produced, Rutherford backscattering of He-4 He particles in channeling condition was done in situ at several energies. The dependence of the dechanneling upon the incident He-4 He beam energy allowed us to characterize the nature of the implantation induced defects. We describe the evolution of the damage resulting from P implantation in CdTe as a function of fluence and implantation energy. In order to understand the nature of the damage, 100 keV P implantations were also monitored with in situ transmission electron microscopy (TEM).